发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device, the method including forming a first gate electrode layer including a semiconductor material on a substrate; performing an annealing process on the first gate electrode layer; performing a dry cleaning process on a surface of the first gate electrode layer after the annealing process; and forming a second gate electrode layer on the first gate electrode layer after the dry cleaning process. |
申请公布号 |
US2014011350(A1) |
申请公布日期 |
2014.01.09 |
申请号 |
US201313937401 |
申请日期 |
2013.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEONG CHOONGKEE;KIM KYUNGHYUN;PARK KIJONG;LEE JIN-I |
分类号 |
H01L29/423 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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