| 摘要 |
PROBLEM TO BE SOLVED: To improve material efficiency by making a capacity of a reaction chamber reducible, to achieve accurate alignment even when film formation of a thin film layer is carried on and on, and to facilitate gas supply control.SOLUTION: A first chamber 1 for film formation of a thin film layer by an ALD method and a second chamber 2 for alignment adjustment are provided being divided individually. Therefore, no alignment adjustment mechanism needs to be installed in a reaction chamber 11 for film formation of the thin film layer by the ALD method, and a capacity in the reaction chamber 11 is reducible, so that a material efficiency can be improved. Further, the alignment adjustment mechanism is installed in the second chamber 2 different from the reaction chamber 11, there is no influence exerted by a gas in the reaction chamber 11 and a shape of the reaction chamber 11 is simplified. Consequently, alignment can be accurately carried out as the film formation of the thin film layer is carried on and on, and gas supply control can be easily performed. |
