| 摘要 |
PROBLEM TO BE SOLVED: To increase the throughput of a plasma processing process, by enhancing the uniformity of plasma.SOLUTION: A workpiece is transferred to a processing chamber, and pressure in the processing chamber is reduced thus starting processing gas flow to the processing chamber. In order to create a gas plasma, a first RF power is applied to an electrode in the processing chamber. Consequently, a plasma processing cycle is started, and the impedance of an RF system including the electrode of first RF power is matched with a desired impedance. While increasing the RF power for the electrode, the impedance of an RF system including the electrode is matched with a desired impedance. After detecting the end of the plasma processing cycle, processing gas flow to the processing chamber and application of RF power to the electrode are ended. |
