METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The present invention provides a method for manufacturing a semiconductor device with high reliability, capable of preventing a leakage current through removing the defect of a metal film and improving a dispersion feature. The method for manufacturing the semiconductor device comprises a step for forming the metal film on the upper part of the semiconductor; a step for forming a capping film on the metal film; and a step for performing densification of the metal film through heat processing. The method reduce the roughness of the metal film and the non-uniformity of a grain boundary; removes defects of the metal film and a high-k dielectric; and improves electrical features such as Rs resistance reduction, CET improvement, and reduction of the leakage current without influencing capacitance equivalent thickness (CET). [Reference numerals] (AA) Start