METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE SUBSTRATE FABRICATED BY THE SAME

摘要

The present invention relates to a manufacturing method of a gallium nitride substrate, and a gallium nitride substrate manufactured by the same and, more specifically, to a manufacturing method of a gallium nitride substrate, and a gallium nitride substrate manufactured by the same which secures the thickness capable of handling of a gallium nitride substrate used for layer transference (LT) and prevents the cracks due to the flexure by minimizing a flexure phenomenon. The present invention provides the manufacturing method of the gallium nitride substrate comprising; a gallium nitride film growth step of growing up a gallium nitride film on a base substrate; and a base substrate separation step of separating the base substrate from the gallium nitride film. In the gallium nitride film growth step, a pit which induces the formation of an inversion domain of the inner side of the gallium nitride film is formed on the gallium nitride film. [Reference numerals] (AA) Start; (BB) End; (S1) First gallium nitride film growth step; (S2) Second gallium nitride film growth step; (S3) Third gallium nitride film growth step; (S4) Base substrate separation step; (S5) First gallium nitride film elimination step