发明名称 VAPOR DEPOSITION APPARATUS AND PLASMA SOURCE
摘要 A vapor deposition apparatus and a plasma source are provided. According to one aspect of the present invention, the vapor deposition apparatus comprises a first electrode having a hollow part formed therein, a second electrode arranged to be separated from the first electrode within the hollow part, and a dielectric tube surrounding the second electrode and separated from the first electrode, wherein plasma is able to be generated between the first electrode and the dielectric tube.
申请公布号 KR20140003232(A) 申请公布日期 2014.01.09
申请号 KR20120071262 申请日期 2012.06.29
申请人 KIM, WON GU 发明人 KIM, BYUNG JUN
分类号 C23C16/50;C23C16/448 主分类号 C23C16/50
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