METHOD FOR EVALUATING SiC SINGLE CRYSTAL SUBSTRATE AND SiC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL AND SiC EPITAXIAL WAFER, AND SiC SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating an SiC single crystal substrate, which is capable of evaluating a dislocation density of an SiC single crystal substrate by reflection X-ray topography without using a monochromator.SOLUTION: The method for evaluating an SiC single crystal substrate evaluates dislocation of an SiC single crystal substrate by reflection X-ray topography. The method uses MoKα rays as an X-ray source and uses an asymmetrical reflecting surface as a diffraction surface to obtain an X-ray topography image of the SiC single crystal substrate and uses the X-ray topography image to measure dislocation density of the SiC single crystal substrate.