| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate which has a large diameter and in which surface orientation of a principal surface has a value other than (0001) and (000-1) and dislocation density within the principal surface is substantially uniform, and a method of manufacturing the substrate.SOLUTION: In the GaN single crystal substrate 20p, an area of a principal surface 20pm is 10 cmor more, surface orientation of the principal surface 20pm is inclined by 65° or more and 85° or less to a (0001) surface or a (000-1) surface 20c, and distribution of dislocation density within the principal surface 20pm is substantially uniform, that is, dispersion of dislocation density to average dislocation density within the principal surface 20pm is within ±100%, for example. |
