| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that allows reducing a parasitic resistance of the channel between a selection transistor and a memory cell, and to provide a method of manufacturing the same.SOLUTION: A semiconductor memory device includes: a substrate; a plurality of electrode films provided on the substrate; a plurality of first insulating films each provided between the electrode films; a second insulating film including a film having a higher dielectric constant than silicon oxide and provided on the uppermost layer of the electrode films; a selection gate directly provided on the second insulating film; a channel body; and a memory film including a charge storage film. The memory film includes a block film, the charge storage film, and a tunnel film that are sequentially provided from the electrode films side. The second insulating film includes at least the block film in the memory film. |
