MEMORY ELEMENT AND MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a memory element and a memory device which are capable of holding a relatively high resistance value stored with a low current and are improved in controllability of the resistance value.SOLUTION: A memory element 1 comprises a first electrode 10, a memory layer 20 including an ion source layer 21, and a second electrode 30 in this order. The memory layer 20 has a structure in which the ion source layer 21 and a variable resistance layer 22 are laminated in order from an upper electrode 30 side. The ion source layer 21 contains a movable element and has a volume resistivity of 150 to 12000 m&OHgr; cm (inclusive).