| 摘要 |
PROBLEM TO BE SOLVED: To favorably form a filament in forming for a resistance change element and to inhibit generation of a high ON resistance cell.SOLUTION: A resistance change type memory includes a resistance change element and a control circuit that controls voltage applied to the resistance change element. The resistance change element includes a first electrode, a second electrode, and a resistance change layer between the first and second electrodes. A material of the second electrode contains one selected from a group consisting of W, Ti, Ta, and nitride thereof. When forming the resistance change element, the control circuit performs first forming processing and then second forming processing. The first forming processing includes applying voltage such that a potential of the first electrode is higher than that of the second electrode. The second forming processing includes applying voltage such that a potential of the second electrode is higher than that of the first electrode. |
