| 摘要 |
PROBLEM TO BE SOLVED: To prevent uneveness and decrease in an optical output on a crystal surface of a semiconductor laser.SOLUTION: A semiconductor laser comprises: a ridge 5 in which a p-type InP clad layer 3 and an n-type InP clad layer 4 sandwich an active layer 2, on a p-type InP substrate 1; current block layers 6 which bury both lateral faces of the ridge 5; and an n-type InP contact layer 7 provided on the ridge 5 and the current block layers 6. The current block layer 6 includes a p-type InP layer 8, an n-type InP layer or a hole trap semi-insulating semiconductor layer 9, a p-type InP layer 10, an undoped InP layer 11 and a highly-doped p-type InP layer 12 which are stacked in this order from the p-type InP substrate 1 side. The n-type InP contact layer 7 includes a p-type inversion region 13 in which a dopant of the highly-doped p-type InP layer 12 is diffused at a part in contact with the highly-doped p-type InP layer 12. The undoped InP layer 11 is composed of undoped InP or semi-insulating InP and inhibits the dopant of the highly-doped p-type InP layer 12 from being diffused to the active layer 2. |
