METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device on which the surface of a silicon film crystallized by laser light is made uniformly flat of the order ofÅwithout damage. SOLUTION: An undercoat 102 and an amorphous silicon film 103 are formed on a glass substrate 101. After heat treatment, a crystal silicon film 104 having asperities on its surface is formed by application of laser light. The crystal silicon film is subjected to dry etching by a mixed gas of CF4 and O2 to obtain an approximately flat surface with a height differential between about 20-30Å. An active layer 106 of TFT is formed by patterning the crystal silicon film like an island. Since the surface of the active layer 106 is flat, the interface level of the active layer 106 and a gate insulating layer 107 formed by chemical vapor deposition can be lowered.