| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having improved transistor performance, and to provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate having a columnar part; a bit line which is embedded in the semiconductor substrate and extends in a first direction; a bit line contact electrically connecting the semiconductor substrate with the bit line; a gate electrode which extends in a second direction at an area above the bit line, is formed facing a side surface of the columnar part of the semiconductor substrate, and has a non-flat lower surface; a gate insulator film which is formed between the gate electrode and the semiconductor substrate; and an impurity diffusion region formed at an upper part of the columnar part of the semiconductor substrate. |
