发明名称 MEMORY CONTROL DEVICE, SEMICONDUCTOR DEVICE, AND SYSTEM BOARD
摘要 According to an embodiment, a memory control device controls a memory from/to which data are read/written by a processor. The memory control device includes a clock switcher and a control signal switcher. The clock receives as input a first clock and a second clock at a higher frequency than the first clock, supplies the first clock to the memory until the second clock becomes stable, and supplies the second clock after the second clock has become stable. The a control signal switcher starts supplying, to the memory, a first control signal for initializing the memory to a state allowing reading/writing of data by the processor while the first clock is being supplied to the memory, and supplies, to the memory, a second control signal according to the reading/writing of data by the processor, after the second clock is supplied to the memory and the memory is initialized.
申请公布号 US2014013138(A1) 申请公布日期 2014.01.09
申请号 US201313786706 申请日期 2013.03.06
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KANAI TATSUNORI;KIMURA TETSURO;FUJISAKI KOICHI;SEGAWA JUNICHI;SHIBATA AKIHIRO;TARUI MASAYA;SHIRAI SATOSHI;SHIROTA YUSUKE;HARUKI HIROYOSHI;TOYAMA HARUHIKO
分类号 G06F1/32 主分类号 G06F1/32
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