SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed is a method for manufacturing a semiconductor component. The method comprises: forming T-shaped dummy gate structures (2A, 2B, and 2C) on a substrate (1); removing the T-shaped dummy gate structures (2A, 2B, and 2C), leaving behind a T-shaped gate groove (2E); and sequentially filling a gate insulation layer (6A) and metal layers (6B and 6C) into the T-shaped gate groove (2E), where the metal layers (6B and 6C) form a T-shaped metal gate structure. By forming the T-shaped dummy gate and the T-shaped gate groove, the method prevents a suspension phenomenon and formation of pores in a subsequent metal gate filling process, thus increasing component performance.