发明名称 SAPPHIRE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a sapphire substrate having a principal surface ordinarily set as a concave surface and a reduced warp amount by a simple process without optimizing a heat treatment condition for every substrate.SOLUTION: The method for manufacturing a sapphire substrate comprises: a plurality of steps of processing a substrate 10 obtained by slicing a sapphire ingot; the single side lapping step of performing single side lapping processing on at least a rear surface 10B of the substrate 10 until the principal surface 10A of the substrate 10 reaches a concave surface; and the heat treatment step of relaxing working stress generated in the substrate 10 after the single side lapping step. Thereby, the sapphire substrate having a diameter of at least 4 inch and a warp amount of 30 μm or less on the rear surface side after the heat treatment step is obtained.
申请公布号 JP2014001107(A) 申请公布日期 2014.01.09
申请号 JP20120137662 申请日期 2012.06.19
申请人 SHARP CORP 发明人 KOYANAGI TOSHIO
分类号 C30B29/20;C30B33/00;H01L21/304 主分类号 C30B29/20
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