| 摘要 |
PURPOSE: A manufacturing method of nano-wires is provided to manufacture high quality nano-wires by etching droplets. CONSTITUTION: A manufacturing method of nano-wires comprises the following steps: forming droplets(30) on a semiconductor substrate(10); growing nano-wires(40) on the droplets; and separating the nano-wires by selectively etching the droplets. The last step comprises the following step: separating the nano-wires by selectively etching and processing the droplets under ultrasonic wave. The droplets in the first step are composed of catalyst-first source. The catalyst is composed of one selected from Au, Ni, Cu, Al, Ag, Pt, Fe, and Cr. The first source is composed of one selected from Ga, In, and Si and Al. |
