| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method capable of sufficiently increasing a film deposition speed.SOLUTION: In a method, a laminate is manufactured using a plasma CVD film deposition device comprising: a vacuum chamber; a pair of film deposition rolls parallely or almost parallely opposed to each other and having magnetic field generation members inside; and a plasma power source whose polarity is inverted. While a long substrate is conveyed under a condition that the substrate is wound around the film deposition rolls so that a first portion on a surface of the substrate is opposed to a second portion on the surface of the substrate in the vacuum chamber, film deposition gas containing organosilicon compound gas and oxygen gas is supplied to a film deposition space between the film deposition rolls. A magnetic field is generated in the film deposition space by the magnetic field generation members, and discharge plasma is generated between the film deposition rolls by the plasma power source, so as to continuously form a thin film layer on the substrate. A frequency of the plasma power source is 1000 kHz to 5800 MHz. |
