| 摘要 |
According to an embodiment of present disclosure, a method of forming a carbon film on a substrate to be processed is provided. The method includes loading a substrate to be processed with a carbon film formed thereon into a processing chamber of a film forming apparatus (Process 1), and thermally decomposing a hydrocarbon-based carbon source gas in the processing chamber to form a carbon film on the substrate to be processed (Process 2). In Process 2, a film forming temperature of the carbon film is set to a temperature less than a thermal decomposition temperature of a simple substance of the hydrocarbon-based carbon source gas without plasma assistance, the hydrocarbon-based carbon source gas and a thermal decomposition temperature drop gas containing a halogen element are introduced into the processing chamber, and a non-plasma thermal CVD method is performed. |
