发明名称 |
EPITAXIAL STRUCTURE AND EPITAXIAL GROWTH METHOD FOR FORMING EPITAXIAL LAYER WITH CAVITIES |
摘要 |
An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well. |
申请公布号 |
US2014008766(A1) |
申请公布日期 |
2014.01.09 |
申请号 |
US201313932665 |
申请日期 |
2013.07.01 |
申请人 |
LEXTAR ELECTRONICS CORPORATION |
发明人 |
CHEN JUN-RONG;CHOU HSIU-MEI;YE JHAO-CHENG |
分类号 |
H01L33/02 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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