NITRIDE GROUP SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a nitride group semiconductor light-emitting element and a method for manufacturing the same. The purpose of the present invention is to improve optical power through high-density doping in an electrode. A nitride group semiconductor light-emitting element according to the present invention comprises a base substrate, a buffer layer, a doping reinforcing layer, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, a p-type electrode, and an n-type electrode. The buffer layer of a nitride group is formed on the base substrate. The doping reinforcing layer is formed on the buffer layer, comprises a plurality of nitride layers including aluminum, a refractive index of which periodically varies, and has an electrode forming portion through which at least two continuous nitride layers among the plurality of nitride layers are exposed. The p-type semiconductor layer of a nitride group includes aluminum formed on the doping reinforcing layer to expose at least the electrode forming portion of the doping reinforcing layer. The active layer of a nitride group includes aluminum formed on the p-type semiconductor layer. The n-type semiconductor layer of a nitride group includes aluminum formed on the active layer. The p-type electrode is formed on the electrode forming portion. The n-type electrode is formed on the n-type semiconductor layer.