发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>The present invention suppresses the discharge by static electricity with separation when a device forming layer having a semiconductor device is separated from a substrate used in the manufacture of the semiconductor device. A separation layer (12) and a device forming layer (11) are formed on a substrate (10). A supporting material (13) which can be separated is fixated on the upper side of the device forming layer (11). The separation is generated on the interface between the separation layer (12) and the device forming layer (11) by placing the supporting material (13) and transforming the device forming layer (11). The separation is formed by supplying a liquid (15) so that the separation layer (12) and the device forming layer (11) shown with the separation get wet by the liquid (15) such as pure water etc. An electric charge generated on the surface of the separation layer (12) and the device forming layer (11) by the liquid (15) is diffused, and then the discharge by the separation electric charge can be eliminated.</p> |
申请公布号 |
KR20140003346(A) |
申请公布日期 |
2014.01.09 |
申请号 |
KR20130139792 |
申请日期 |
2013.11.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
EGUCHI SHINGO;MONMA YOHEI;TANI ATSUHIRO;HOSAKA YASUHARU;HASHIMOTO KENICHI;HIROSUE MISAKO |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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