发明名称 |
PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method showing excellence in reduction of bridge defects and restrained in generation of particles in forming a fine pattern with a line width of 50 nm or less by a developing method using an organic developing solution, and to provide an actinic ray-sensitive or radiation-sensitive resin composition used for the method, a resist film, a method for manufacturing an electronic device, and an electronic device.SOLUTION: The pattern forming method includes steps of: (i) forming a film of an actinic ray-sensitive or radiation-sensitive resin composition; (ii) exposing the film; and (iii) developing the film by using a developing solution containing an organic solvent to form a negative pattern. The actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin showing an increase in the polarity by an action of an acid to decrease the solubility with a developing solution containing an organic solvent, (B) a compound that generates an acid by irradiation with actinic rays or radiation, (C) a solvent, and (D) a resin having a structural unit including a fluorine atom but no CFmoiety structure. |
申请公布号 |
JP2014002358(A) |
申请公布日期 |
2014.01.09 |
申请号 |
JP20130046376 |
申请日期 |
2013.03.08 |
申请人 |
FUJIFILM CORP |
发明人 |
ITO JUNICHI;YAMAGUCHI SHUHEI;TAKAHASHI HIDETOMO;YAMAMOTO KEI |
分类号 |
G03F7/038;G03F7/039;G03F7/32;H01L21/027 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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