| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-luminance semiconductor light-emitting element.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer containing a nitride semiconductor, a p-type semiconductor layer containing a nitride semiconductor, and a light-emitting portion. The light-emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes an n-side barrier layer and a first light-emitting layer. The first light-emitting layer includes: a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer; a first well layer in contact with the n-side barrier layer between the n-side barrier layer and the first barrier layer; a first AlGaN layer provided between the first well layer and the first barrier layer, and containing AlGaN (0.25<z1≤1); and a first nitride semiconductor layer in contact with the first AlGaN layer and the first barrier layer. The peak wavelength λp of the light emitted from the light-emitting portion is longer than 515 nm. |
