发明名称 |
Method for Producing a Semiconductor Chip Emitting Radiation, Semiconductor Chip Emitting Radiation, and Component Emitting Radiation |
摘要 |
A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided. |
申请公布号 |
US2014008683(A1) |
申请公布日期 |
2014.01.09 |
申请号 |
US201113991408 |
申请日期 |
2011.11.23 |
申请人 |
PETERSEN KIRSTIN;BAUMANN FRANK;EISERT DOMINIK;CUI HAILING;OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
PETERSEN KIRSTIN;BAUMANN FRANK;EISERT DOMINIK;CUI HAILING |
分类号 |
H01L33/50 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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