| 摘要 |
PROBLEM TO BE SOLVED: To provide a field side sub-bitline NOR flash array, and a method of fabricating the same.SOLUTION: A field side sub-bitline NOR flash array forms field side sub-bitlines by utilizing impurity of the same type as source/drain electrodes of memory cells. The field side sub-bitlines are connected to source/drain electrodes of a plurality of memory cells along the two side walls of field trench oxide. Each field side sub-bitline is connected to a corresponding main bitline through a contact provided at a twisted point in the middle. Because there are no contacts in the connected source/drain electrodes of the memory cells, the wordline pitch and the bitline pitch correspond to the minimum shape of a specific semiconductor process technology node. The field side sub-bitline NOR-type flash array has a high cell area density. |
