| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-linear optical device with wide band gain width and a high response speed and capable of manufacturing with a simple process by forming an active layer so that a size of an energy wall of each self quantum well is equal or reduced along the direction of an electric field applied to a multiplex quantum well structure. SOLUTION: A laser active layer 7 is constituted of at least partial each quantum well of the multiplex quantum well structure consisting of plural quantum wells formed on a part of an optical waveguide 2, and light inductive emission by transition between sub-bands occurs. Then, in this active layer 7, the size of the self energy wall is equal or reduced along the direction of the electric field applied to the multiplex quantum well structure. Thus, the wide band gain width and the high response speed are realized. Further, respective layers are formed by a nitride system compound semiconductor layer, and a wall layer with high energy is formed easily, and further, even an integrated structure between a laser amplifier and an intersub-band absorption layer is manufactured with the simple process. |
