| 摘要 |
PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which can prevent irreversible change in the characteristics due to a magnetic field in the direction orthogonal to the sensitivity axis direction, and to provide a current sensor including the magneto-resistance effect element.SOLUTION: The magneto-resistance effect element includes a magnetization free layer (307) having a magnetization direction which varies upon application of an external magnetic field, and a pair of bias parts (22, 23) which apply bias magnetic fields (B1, B2) for fixing the magnetization direction of the magnetization free layer to a predetermined direction when the external magnetic field is non-magnetic field. The pair of bias parts are configured to allow for application of bias magnetic fields, facing each other, to the magnetization free layer. |
