| 摘要 |
Radio-frequency (RF) switch circuits are disclosed having one or more transistors coupled to provide improved harmonic management. The RF switch circuits including at least one field-effect transistor (FET) disposed between first and second nodes, each of the at least one FET having a respective body and gate. A coupling circuit can be configured to couple the respective body and gate of each of the at least one FET. The coupling circuit can include a capacitor electrically parallel with a diode. |
