| 摘要 |
A static random-access memory (SRAM) in an integrated circuit with circuitry for timing the enabling of sense amplifiers. The memory includes read/write SRAM cells, along with word-line tracking transistors arranged in one or more rows along a side of the read/write cells, and read-tracking transistors arranged in a column along a side of the read/write cells. A reference word line extends over the word-line tracking transistors, with its far end from the driver connected to pass transistors in the read-tracking transistors. The read-tracking transistors are preset to a known data state that, when accessed responsive to the reference word line, discharges a reference bit line, which in turn drives a sense amplifier enable signal. |
