| 摘要 |
A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate, (ii) a variable resistance element having: lower and upper electrodes; and a variable resistance layer whose resistance value reversibly varies based on voltage signals each of which has a different polarity and is applied between the electrodes, and (iii) a MOS transistor formed on the substrate, wherein the variable resistance layer includes: oxygen-deficient transition metal oxide layers having compositions MOx and MOy (where x<y) and in contact with the electrodes respectively, a diffusion layer region is connected with the lower electrode to form a memory cell, the region serving as a drain upon application of a voltage signal which causes a resistance change to high resistance state in the variable resistance layer. |
