| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing method which can improve polishing performance of a substrate such as a wafer and polishing end point detection accuracy, and further improve throughput.SOLUTION: A polishing method of present invention comprises: a first polishing process of polishing a metal film 107 until the thickness of the metal film 107 reaches a predetermined target value by bringing a wafer into sliding contact with a polishing pad on a first polishing table; a second polishing process of polishing the metal film 107 until a conductive film 106 is exposed by bringing the wafer in sliding contact with a polishing pad on a second polishing table; a third polishing process of polishing at least the conductive film 106 by bringing the wafer in sliding contact with a polishing pad on a third polishing table; and a fourth polishing process of polishing at least an insulation film 103 by bringing the wafer in sliding contact with a polishing pad on a fourth polishing table. |
