SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a method for manufacturing the same, capable of coming into ohmic contact with an n-type impurity region and achieving low-contact resistance for a p-type impurity region.SOLUTION: A silicon carbide semiconductor device 1 comprises a silicon carbide substrate 10 and a contact electrode 16. The silicon carbide substrate 10 includes an n-type region 14 and a p-type region 18 in contact with the n-type region 14. The contact electrode 16 is in contact with the n-type region 14 and the p-type region 18. The contact electrode 16 also includes an Ni atom and an Si atom. The number of Ni atoms is not less than 87% and not more than 92% of the total number of Ni atoms and Si atoms.