| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase shift mask blank in which processing steps can be reduced without sacrifice of process accuracy, and to provide a method for manufacturing a phase shift mask.SOLUTION: The method for manufacturing a phase shift mask includes steps of: preparing a mask blank, which includes a phase shift film 30 comprising a material containing a silicon, an etching mask film 10 comprising a material containing chromium, and a light-shielding film 20 comprising a material containing tantalum, successively layered on a light-transmitting substrate; dry etching the light-shielding film by using chlorine-based gas and using a resist film as a mask; dry etching the etching mask film by using mixture gas of chlorine-based gas and oxygen gas and using the resist film or the light-shielding film as a mask; and dry etching the phase shift film by using fluorine-based gas and using the etching mask film as a mask. |
