| 摘要 |
A nonvolatile semiconductor memory device includes a semiconductor substrate and memory transistors, each of which has a laminate formed by alternately laminating insulating films and conductive films on the semiconductor substrate, a silicon pillar going through the laminate, a tunnel insulating film arranged on the surface of the silicon pillar facing the laminate, a charge accumulating layer arranged on the surface of the tunnel insulating film facing the laminate, and a block insulating film arranged on the surface of the charge accumulating layer facing the laminate and in contact with the conductive film. During a data deletion operation, a voltage is applied on the conductive film so that the potential of the silicon pillar with respect to the conductive film decreases as the cross-sectional area of the silicon pillar decreases. |
