发明名称 |
III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHOD OF MAKING THE SAME |
摘要 |
semiconductor device comprises a semiconductor substrate; a channel layer of at least a first III-V semiconductor compound above the semiconductor substrate; a gate stack structure above a first portion of the channel layer; a source region and a drain region comprising at least a second III-V semiconductor compound above a second portion of the channel layer; and a first metal contact structure above the S/D regions comprising a first metallic contact layer contacting the S/D regions. The first metallic contact layer comprises at least one metal-III-V semiconductor compound. |
申请公布号 |
US2014008699(A1) |
申请公布日期 |
2014.01.09 |
申请号 |
US201213542860 |
申请日期 |
2012.07.06 |
申请人 |
OXLAND RICHARD KENNETH;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
OXLAND RICHARD KENNETH |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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