THIN FILM TRANSISTOR MANUFACTURING METHOD AND ARRAY SUBSTRATE MANUFACTURING METHOD

摘要

Provided in an embodiment of the present invention are a thin film transistor manufacturing method and array substrate manufacturing method, the thin film transistor manufacturing method comprising: forming a gate electrode on a transparent substrate; forming a gate insulation layer; forming a transparent semiconductor thin film, patterning the semiconductor thin film to form a semiconductor layer, and reserving a photoresist located above the semiconductor layer; from one side of the transparent substrate opposite to the side forming the gate electrode, using the gate electrode as a mask to expose and develop the reserved photoresist, so as to form a groove position photoresist corresponding to the gate electrode; forming a source-drain metallic thin film, and stripping the groove position photoresist and the source-drain metallic thin film thereabove; and patterning the remaining source-drain metallic thin films to form a source electrode and a drain electrode. The embodiment of the present invention is used to manufacture a product or device comprising the thin film transistor.