CHEMICAL AMPLIFICATION RESIST COMPOSITION, NEGATIVE TYPE CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANK, PHOTOMASK AND PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a chemical amplification resist composition from which an ultrafine pattern (for example, a pattern having a line width of 50 nm or less) can be formed in a state simultaneously satisfying demands for high PED stability, excellent PEB temperature dependency, high sensitivity and high resolution (for example, high resolving power, excellent pattern feature and small line edge roughness (LER)).SOLUTION: The chemical amplification resist composition comprises: (A) a compound having a triarylsulfonium cation having one or more fluorine atoms and generating a sulfonic acid with a volume of 240Åor more by irradiation with actinic rays or radiation; and (B) a compound having a phenolic hydroxyl group.