| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device by achieving improvement in EM characteristics, TDDB characteristics and breakdown strength characteristics of the semiconductor device.SOLUTION: In a semiconductor device, an elastic modulus of a lower insulation layer PB2 is increased by making a mean diameter of holes 9 in the lower insulation layer PB2 constituting an interlayer insulation film IL2 which is a porous Low-k film in which wiring is embedded be smaller than a mean diameter of holes 10 in an upper insulation layer PT2. Then, a side wall insulation layer PS2 which is a dense layer including the holes 9 having a mean diameter smaller than that of the holes 10 is formed on a surface of the interlayer insulation film IL2 exposed on a side wall of a wiring groove WD2. |
