| 摘要 |
A thin film transistor substrate includes a source line and a gate line arranged to cross each other in a grid pattern, and a thin film transistor arranged at the intersection between the source line and the gate line. The source line is covered with an insulating film, and the insulating film is covered with a first alignment film. An opposite substrate includes a protrusion arranged so as to protrude toward the thin film transistor substrate. With the thin film transistor substrate and the opposite substrate arranged to face each other, the protrusion is arranged so as to cover the source line from above and to extend in a direction in which the source line extends. The protrusion has a conductive film arranged on an edge surface of the protrusion near the source line. The protrusion and the conductive film are covered with a second alignment film. |
