| 摘要 |
PROBLEM TO BE SOLVED: To reduce external crack of a semiconductor device and improve reliability of the semiconductor device. SOLUTION: In a manufacturing method of a semiconductor device, solution of polyamide acid obtained by making organic tetrabasic acid dianhydride component with diamine component is spread on a semiconductor element, and a polyimide based resin film is formed by thermal treatment. After the polyimide based resin film is worked by etching using resist as a mask member, the resist is peeled off with peeling liquid, and sealing is performed. The rest of resist exfoliation which is generated at the time of exfoliation of the resist is eliminated with remover liquid for resist exfoliation residual which contains at least one kind of compound selected out of ether compound shown by a formula I (where, R<1> and R<2> are hydrogen or alkyl group whose carbon number is 1-6, and (n) is an integer of 1-3) and sulfone compound shown by a formula II (where, R<3> and R<4> are alkyl group whose carbon number is 1-4 or group forming a ring structure whose carbon number is 4-6 by linkage, and O<1> is oxygen which is may not exist). |
