| 摘要 |
PROBLEM TO BE SOLVED: To decrease the number of parts down to only one and to reduce the weight and the cost of a surface acoustic wave device with improvement of its performance by bondign the surface acoustic wave device directly to a semiconductor of silicon, etc., and forming a recess at the boundary part of ensure an effective propagation of the surface acoustic wave. SOLUTION: A connection electrode 12 of a wiring part is provided on a silicon semiconductor substrate 11, and a piezoelectric substance 21 having a surface acoustic wave generation receiving comb-line electrode 22 on its surface is provided on the electrode 12. An adhesive is applied on the interface between the substance 21 and the substrate 11, so that they are adhered together. At the same time, a recess 23 of 1μm or less is formed on the substrate 11 as a propagation part of the surface acoustic wave. When the output voltage of a driving transistor provided on the substrate 11 is applied to the electrode 22 formed on the substance 21, matching between the output impedance of the transistor and the input impedance of the electrode 22 is secured. Thus, no impedance is caused at a lead wire part against a surface acoustic wave device and accordingly the matching of impediances is facilitated.
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