发明名称 DISTRIBUTED SUBSTRATE TOP CONTACT FOR MOSCAP MEASUREMENTS
摘要 Capacitor device structures can be fabricated on a substrate including multiple separate first electrodes and a common distributed second electrode. The second electrode can be common to the multiple first electrodes and can be distributed in a shape of a grid interdigitating the multiple first electrodes. The distributed nature of the second electrode can replace the substrate backside as the bottom electrode and can reduce the device parasitic characteristics. In some embodiments, the capacitor device structures can be used in a high productivity combinatorial process, wherein the distributed nature of the second electrode can make the test structures more tolerant to misalignment.
申请公布号 US2014008763(A1) 申请公布日期 2014.01.09
申请号 US201213544710 申请日期 2012.07.09
申请人 MUJUMDAR SALIL;JOSHI AMOL;INTERMOLECULAR, INC. 发明人 MUJUMDAR SALIL;JOSHI AMOL
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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