发明名称 METHOD OF OPERATING FILM DEPOSITION APPARATUS AND FILM DEPOSITION APPARATUS
摘要 A method of operating a film deposition apparatus including a turntable provided in a vacuum chamber and configured to rotate a substrate mounted thereon, a first reaction gas supplying portion, a second reaction gas supplying portion, a separation area, a first vacuum evacuation port for mainly evacuating the first reaction gas, a second vacuum evacuation port for mainly evacuating the second reaction gas, and a cleaning gas supplying portion for supplying a cleaning gas to clean the turntable, the method includes a cleaning step of supplying the cleaning gas from the cleaning gas supplying portion into the vacuum chamber while terminating the evacuation from the first vacuum evacuation port and performing the evacuation from the second vacuum evacuation port.
申请公布号 US2014011370(A1) 申请公布日期 2014.01.09
申请号 US201313932154 申请日期 2013.07.01
申请人 TOKYO ELECTRON LIMITED 发明人 KATO HITOSHI;MIURA SHIGEHIRO
分类号 H01L21/02 主分类号 H01L21/02
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