| 发明名称 |
HIGH DENSITY CAPACITORS UTILIZING THIN FILM SEMICONDUCTOR LAYERS |
| 摘要 |
The present invention generally relates to a capacitor. By utilizing a semiconductor material between two electrodes, the storage capacity of the capacitor is increased as compared to a metal-insulator-metal capacitor. |
| 申请公布号 |
US2014008761(A1) |
申请公布日期 |
2014.01.09 |
| 申请号 |
US201213488607 |
申请日期 |
2012.06.05 |
| 申请人 |
YE YAN;APPLIED MATERIALS, INC. |
发明人 |
YE YAN |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
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