发明名称 |
Three Dimensional NAND Device and Method of Charge Trap Layer Separation and Floating Gate Formation in the NAND Device |
摘要 |
A monolithic three dimensional NAND string includes a vertical semiconductor channel and a plurality of control gate electrodes in different device levels. The string also includes a blocking dielectric layer, a charge storage region and a tunnel dielectric. A first control gate electrode is separated from a second control gate electrode by an air gap located between the major surfaces of the first and second control gate electrodes and/or the charge storage region includes silicide nanoparticles embedded in a charge storage dielectric. |
申请公布号 |
US2014008714(A1) |
申请公布日期 |
2014.01.09 |
申请号 |
US201213544328 |
申请日期 |
2012.07.09 |
申请人 |
MAKALA RAGHUVEER S.;ALSMEIER JOHANN;LEE YAO-SHENG;SANDISK TECHNOLOGIES INC. |
发明人 |
MAKALA RAGHUVEER S.;ALSMEIER JOHANN;LEE YAO-SHENG |
分类号 |
H01L27/088;H01L21/8239 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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