APPARATUS AND METHOD FOR ROUNDED ONO FORMATION IN A FLASH MEMORY DEVICE
摘要
A method and apparatus for continuously rounded charge trapping layer formation in a flash memory device. The memory device includes a semiconductor layer, including a source/drain region. An isolation region is disposed adjacent to the source/drain region. A first insulator is disposed above the source/drain region. A charge trapping layer is disposed within the first insulator, wherein the charge trapping layer comprises a bulk portion and a first tip and a second tip on either side of said bulk portion, wherein said charge trapping layer extends beyond the width of the source/drain region. A second insulator is disposed above the charge trapping layer. A polysilicon gate structure is disposed above the second insulator, wherein a width of said control gate is wider than the width of said source/drain region.
申请公布号
WO2014008252(A1)
申请公布日期
2014.01.09
申请号
WO2013US49054
申请日期
2013.07.02
申请人
SPANSION LLC;FANG, SHENQING;CHEN, TUNG-SHENG;THURGATE, TIM;LI, DI
发明人
FANG, SHENQING;CHEN, TUNG-SHENG;THURGATE, TIM;LI, DI