发明名称 LIGHT EMITTING DIODE WITH LIGHT EMITTING LAYER CONTAINING NITROGEN AND PHOSPHORUS
摘要 <p>Embodiments of the invention include an n-type region, a p-type region, and a light emitting layer disposed between the n-type region and the p-type region. The light emitting layer is a III-V material comprising nitrogen and phosphorus. The device also includes a graded region disposed between the light emitting layer and one of the p-type region and the n-type region. The composition of materials in the graded region is graded.</p>
申请公布号 WO2014006531(A1) 申请公布日期 2014.01.09
申请号 WO2013IB55161 申请日期 2013.06.24
申请人 KONINKLIJKE PHILIPS N.V. 发明人 TURCOTTE, STEPHANE
分类号 H01L33/06;H01L33/00;H01L33/12;H01L33/32;H01S5/323;H01S5/343 主分类号 H01L33/06
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