发明名称 SELECTIVE CHEMICAL ETCHING PROCESS
摘要 <p>The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention.</p>
申请公布号 EP2681771(A1) 申请公布日期 2014.01.08
申请号 EP20120708961 申请日期 2012.03.01
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 RAPISARDA, DARIO;DUFOURCQ, JOEL;PERRAUD, SIMON;PONCELET, OLIVIER
分类号 H01L27/142;H01L31/032;H01L31/18 主分类号 H01L27/142
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