发明名称 |
SELECTIVE CHEMICAL ETCHING PROCESS |
摘要 |
<p>The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention.</p> |
申请公布号 |
EP2681771(A1) |
申请公布日期 |
2014.01.08 |
申请号 |
EP20120708961 |
申请日期 |
2012.03.01 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
RAPISARDA, DARIO;DUFOURCQ, JOEL;PERRAUD, SIMON;PONCELET, OLIVIER |
分类号 |
H01L27/142;H01L31/032;H01L31/18 |
主分类号 |
H01L27/142 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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